스틸 드럼 포장과 복합 초경합금 파우더 ISO9001

metal Carbides WC-Co Cemented Carbide Particle Inhibitor Compound Carbide Solid Solution

In order to effectively control the sintering process of WC grains grow up, obtain high strength and high hardness of ultrafine cemented carbide, using scanning electron microscopy (sem), tensile machine and rockwell hardness meter to study the different mass fraction and the ratio of VC/Cr3C2 and sintering temperature on ultra-fine WC grain growth inhibitors WC- Co cemented carbide in the microstructure and mechanical properties of impact, combined with the test results of ultrafine cemented carbide are analyzed in the VC/Cr3C2 grain growth inhibitor mechanism. The results show that, adding proper amount of VC/Cr3C2 grain growth inhibitor in ultra fine cemented carbides WC grain size distribution, there is no obvious groupWeaving defects, alloy has a fine and uniform microstructure and excellent mechanical properties. When the grain growth inhibitor 0.5% (mass fraction) of 0.2% VC/Cr3C2, 1450 ℃ sintering preparation of ultrafine WC - 12 Co carbide bending strength of 3710 mpa, hardness (HRA) 91.5 VC/Cr3C2 mechanism for grain growth inhibitors: VC main reaction with WC generate solid solution (W, V) C gathered in WC/Co interface, can reduce the WC/Co interface, Cr3C2 main solid solution in the binder phase, lead to the WC solubility in the binding phaseLow. The combined action of the two slows down the dissolution and precipitation process of WC in the bonding phase, thus inhibiting the growth of WC grains in the sintering process.

We have different kind of metal Carbides, include tantalum carbide powder ( TaC ), niobium carbide powder ( NbC ), titanium carbide powder ( TiC ), chromium carbide powder ( Cr3C2 ), vanadium carbide powder ( VC ), molybdenum carbide powder ( MoC ) , and compound carbide solid solutionc, include Tantalum-Niobium Carbide Solid Solution powder ( Ta+Nb Carbide), Tungsten-Titanium-Tantalum Carbide Solid Solution Powder with Chromium (W+Ti+Ta Carbide + Cr), Tungsten-Titanium-Tantalum (Niobium) Carbide Solid Solution Powder (W+Ti+Ta/Nb Carbide + Cr), Tungsten-Titanium Carbide Solid Solution Powder (W+Ti carbide).

1. Tantalum Carbide Powder

  

Grade		(TaNb)C 80:20	(TaNb)C 60:40	(TaNb)C 90:10	(TaNb)C 70:30
Main content %	Ta	71±1.5	56±1.3	84.4±1.5	65.6±1.5
	Nb	20.6±1.0	35±1.3	8.85±1.0	26.6±1.2
	T.C.	7.2±0.5	8.1±0.5	6.75±0.5	7.8±0.5
	F.C.	＜0.15	＜0.15	＜0.15	＜0.15
Impurity content ％ MAX	Co	0.15	0.15	0.15	0.15
	Si	0.02	0.02	0.01	0.01
	Fe	0.15	0.15	0.15	0.15
	Ca	0.01	0.01	0.01	0.01
	Al	0.015	0.015	0.015	0.015
	N	0.20	0.20	0.20	0.20
	S	0.03	0.03	0.03	0.03
	O	0.25	0.25	0.25	0.25
	Ti	0.05	0.05	0.05	0.05
Fsss size (um)		2.50±1.50	2.50±1.50	2.50±1.50	2.50±1.50

 

 

 

 

4. Tungsten-Titanium-Tantalum Carbide Solid Solution Powder with Chromium.

 

Grade		YH1CK	YH2CK	YH3CK
Main content %	Ti	19.6±0.5	22.6±0.5	25.1±0.5
	Ta	35.5±0.5	27.0±0.5	20.0±0.5
	T.C.	9.6±0.2	10.2±0.2	10.6±0.2
	F.C.	＜0.40	＜0.40	＜0.40
	Cr	0.14-0.22	0.16-0.26	0.14-0.25
	W	balance	balance	balance
Impurity ％ MAX	Fe	0.10	0.10	0.10
	Na	0.005	0.005	0.005
	K	0.005	0.005	0.005
	S	0.03	0.03	0.03
	O	0.30	0.30	0.30
	N	0.25	0.25	0.25
Fsss size (um)		≤1.0	≤1.0	≤1.0

 

 

 

 

 

5.Tungsten-Titanium-Tantalum (Niobium) Carbide Solid Solution Powder.

 

Grade		4K29	4K34	4K11	4K10	YS30	4K12
Main content %	Ti	29.4±0.5	35.0±0.5	10.4±0.5	32.0±0.5	26.5±0.5	12.0±0.5
	W	36.0±1.0	--	63.0±1.5	45.5±1.5	balance	balance
	T.C.	11.2±0.2	12.0±0.2	7.8±0.3	12.1±0.3	10.8±0.2	7.8±0.4
	F.C.	＜0.30	＜0.20	＜0.60	--	＜0.30	＜0.60
	Ta	22.4-23.4	52.5-53.5	17.6-18.6	＜0.30	30.7-31.7	24.0-26.0
	Nb	--	--	--	10.0±0.5	--	--
Impurity ％ MAX	Fe	0.10	0.10	0.10	0.10	0.10	0.15
	Na	0.005	0.005	0.005	0.005	0.005	0.005
	K	0.005	0.005	0.005	0.005	0.005	0.005
	S	0.03	0.03	0.03	0.03	0.03	0.03
	O	0.30	0.30	0.30	0.30	0.30	0.30
	N	0.50	0.50	0.50	0.50	0.50	0.50
Fsss size (um)		2.5±1.0	2.5±1.0	2.5±1.0	2.5±1.0	2.5±1.0	2.5±1.0

 

 

 

 

 

6. Tungsten-Titanium Carbide Solid Solution Powder

 

Grade		4K32	4K40	4K24	4K64
Main chemical composition %	Ti	32±0.5	39.5±1.5	24.0±0.5	63.5±1.5
	W	56.0±1.0	47.0±1.5	65.0±1.5	19.5±1.5
	T.C.	11.2±0.2	12.4±0.3	10.2±0.5	16.5±0.5
	F.C.	＜0.2	＜0.5	＜0.4	＜0.60
Impurity content ％ MAX	Fe	0.10	0.10	0.10	0.1
	Mo	0.10	0.10	0.10	0.10
	Si	0.005	0.005	0.005	0.005
	Co	0.05	0.05	0.05	0.05
	Na	0.005	0.005	0.005	0.005
	K	0.005	0.005	0.005	0.005
	Ca	0.01	0.01	0.01	0.01
	S	0.03	0.03	0.03	0.03
	O	0.30	0.30	0.30	0.50
	N	0.50	0.50	0.50	0.50
Phase composition		Single phase	Single phase	Single phase	Single phase
Fsss size (um)		2.5±1.0	2.5±1.0	2.5±1.0	2.5±1.0

 

 

 

7. Vanadium Carbide Powder

 

Grade		FVC-1	FVC-2	FVC-3	VC-C-4
Impurity content % MAX	T.C.	＞16.8	＞16.8	＞16.8	＞16.8
	F.C.	＜1.0	＜1.0	＜1.0	＜0.80
	O	＜1.20	＜0.50	＜0.30	＜0.30
	N	0.30	0.40	0.40	0.40
	Fe	0.15	0.15	0.15	0.40
	Ca	0.05	0.05	0.05	0.05
	Al	0.02	0.02	0.02	0.02
	Si	0.05	0.05	0.05	0.20
	Na	0.01	0.01	0.01	0.01
Fsss size (um)		1.0±0.20	1.5±0.5	3.0±1.0	--
Sieve size of VC-C-4 (mesh)		-60/+325,-100/+200, -200/+325, -325 (Can be negotiated)

8. Titanium Carbide Nitride Powder

9. Titanium Nitride Powder

10. Chromium Carbide powder

11. Titanium Carbide Powder

12. Molybdenum Carbide Powder